按发表时间顺序:

王霆, 刘会赞, 张建军. Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates[J]. 中国物理快报: 英文版, 2016 (4): 52-55.PDF

 

Zhang J, Brehm M, Grydlik M, et al. Evolution of epitaxial semiconductor nanodots and nanowires from supersaturated wetting layers[J]. Chemical Society Reviews, 2015, 44(1): 26-39.PDF

 

Zhang J J, Schmidt O G. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si (001)[J]. Applied Physics Letters, 2013, 103(14): 143112.PDF

 

Zhang J J, Rastelli A, Schmidt O G, et al. Self-organized evolution of Ge/Si (001) into intersecting bundles of horizontal nanowires during annealing[J]. Applied Physics Letters, 2013, 103(8): 083109.PDF

 

Zhang J J, Katsaros G, Montalenti F, et al. Monolithic growth of ultrathin Ge nanowires on Si (001)[J]. Physical review letters, 2012, 109(8): 085502.PDF

 

Zhang J, Rastelli A, Schmidt O G, et al. Site‐controlled SiGe islands on patterned Si (001): Morphology, composition profiles, and devices[J]. physica status solidi (b), 2012, 249(4): 752-763.PDF

 

Wang T, Lee A, Tutu F, et al. The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates[J]. Applied Physics Letters, 2012, 100(5): 052113.PDF

 

Liu H, Wang T, Jiang Q, et al. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate[J]. Nature Photonics, 2011, 5(7): 416-419.PDF

 

Wang T, Liu H, Lee A, et al. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates[J]. Optics express, 2011, 19(12): 11381-11386.PDF

 

Zhang J J, Rastelli A, Schmidt O G, et al. Role of the wetting layer for the SiGe Stranski–Krastanow island growth on planar and pit-patterned substrates[J]. Semiconductor Science and Technology, 2010, 26(1): 014028.PDF

 

Zhang J J, Montalenti F, Rastelli A, et al. Collective shape oscillations of SiGe islands on pit-patterned Si (001) substrates: a coherent-growth strategy enabled by self-regulated intermixing[J]. Physical review letters, 2010, 105(16): 166102.PDF

 

Zhang J, Rastelli A, Schmidt O G, et al. Compositional evolution of SiGe islands on patterned Si (001) substrates[J]. Applied Physics Letters, 2010, 97(20): 203103.PDF

 

Zhang J J, Hrauda N, Groiss H, et al. Strain engineering in Si via closely stacked, site-controlled SiGe islands[J]. Applied Physics Letters, 2010, 96(19): 193101.PDF

 

Zhang J J, Rastelli A, Groiss H, et al. Shaping site-controlled uniform arrays of SiGe/Si (001) islands by in situ annealing[J]. Applied Physics Letters, 2009, 95(18): 183102.PDF

 

Zhang J J, Stoffel M, Rastelli A, et al. SiGe growth on patterned Si (001) substrates: Surface evolution and evidence of modified island coarsening[J]. Applied Physics Letters, 2007, 91(17): 173115.PDF

 

Zhang J, Zhang K, Zhong J. Local self-organization of islands in embedded nanodot systems[J]. Applied physics letters, 2004, 84(11): 1853-1855.PDF

 

Zhang J, Zhang K, Zhong J. Replication and alignment of quantum dots in multilayer heteroepitaxial growth[J]. Surface science, 2004, 551(1): L40-L46.PDF